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칩(Chip)
Visible LED chip (가시광선) IR (Infrared) LED (적외선) 제너다이오드 & 서브 마운트 포토다이오드 & 트랜지스트 기타
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Visible LED Chip : 가시광선
- 제품의 칩 사이즈는 변동이 있을 수 있으므로 확인시 연락 문의 바람

Bare chip Blue(InGaN)

파장범위 Wd(nm)
Min~max 440~480
수평구조
13*11mil 18*38mil
24mil 30mil 35mil 45mil

45mil N up 수직구조
42mil N up 수직구조
  • Silver adhesive
  • Eutectic
45mil Flip chip

Bare chip Green(InGaN)

파장범위 Wd(nm)
Min~max 500~540
수평구조
13*11 24mil 30mil 35mil 45mil
수직구조 ; 42 mil n up
Flip chip ; 45 mil

Bare chip Red(AllnGaP)

파장범위 Wd(nm)
Min~max 600~650
Chip size 별
수평구조, 수직구조

Bare chip Yellow(AllnGaP)

파장범위 Wd(nm)
Min~max 550~600
Chip size 별
수평구조, 수직구조

Bare chip
UV LEDs

파장범위 Wd(nm)
Min~max 355~430, chip
size별
45mil
      1)N P up (수평구조)
      2)N up (수직 구조)
      3)Flip chip
24mil ; 수평구조
13*11 mil 수평구조
11mil,13mil,40 mil 수평구조


Power LED(Red, Yellow)
Part Name color 파장(λd)
(nm)
Vf(V) Test
조건
Chip
size
Power
(Luminous Intensity)
Rank(Major생산율)
Chip 모양
(Top View)
비고
TK560UYH Hyper Yellow Chip 592±5 Avg=2.6
Max=2.7
@
700mA
60mil
(1500㎛)
S≥9900, T≥11400(60%)
U≥13100(40%)
For 3 watt
이상 LED
TK560UOH Hyper Red Chip 626±4
TK545UYH Hyper Yellow Chip 592±5 Avg=2.6
Max=2.7
@
700mA
45mil
(1125㎛)
S≥9900, T≥11400(70%)
U≥13100(30%)
For 3 watt
LED
TK545UOH Hyper Red Chip 627±4
TK540UYH Hyper Yellow Chip 592±5 Avg=2.6
Max=2.7
@
350mA
45mil
(1000㎛)
T≥5700, U≥6500(70%), V≥7500(30%), W For 1 watt
LED
TK540UOH Hyper Red Chip 620-623-630 R≥4300, S≥5000(40%), T≥5700(60%)
TK540DRH Hyper Deep Red Chip 655±5 nm L≥1850, M≥2150, N≥2450
O≥2800, P≥3250
TK530UOH Hyper Red Chip 620-623-630 Avg=2.6
Max=2.75
@
350mA
30mil
(750㎛)
R≥4300(60%), S≥5000(40%), T≥5700  
TK530UYH Hyper Yellow Chip 590±5 S≥5000,T≥5700(50%), U≥6500(40%),
V≥7500, W≥8700
TK520UYH Hyper Yellow Chip 590±5 Avg=2.6
Max=2.75
@
150mA
20mil
(500㎛)
M≥2150, N≥2450(30%),
O≥2800(70%),P≥3250
 
TK520UOH Hyper Red Chip 620-623-630 L≥1850, M≥2150(40%),
N≥2450(30%),O≥2800(30%),P≥3250


High Power 및 일반 칩
Color (Wd) Part no Material Top Size 두께 IF IV(mcd) Wd(nm) Vf(V) 특징
전극 (um) (um) (mA) Min Max Min Typ Max Max
560nm
Pure
Green
TK110PG GaP/GaP P 250 260 20 1.0 - - 560 - 2.50  
TK111PG GaP/GaP P 275 260 20 1.0 - - 560 - 2.40  
567nm
Pure
Green
TK110SG GaP/GaP P 250 260 20 4.0 - - 567 - 2.50  
TK111SG GaP/GaP P 275 260 20 4.0 - - 567 - 2.40  
569nm
Green
TK108MG GaP/GaP P 195 240 20 4.0 - - 569 - 2.50  
TK109MG GaP/GaP P 225 240 20 4.0 - - 569 - 2.50 Wp=565nm
TK110MG GaP/GaP P 250 260 20 4.0 - - 569 - 2.50  
TK110MGH GaP/GaP P 250 240 20 4.0 13 - 569 - 2.50 Wp=565nm
572nm
Yellow
Green
TK108YGU GaP/GaP P 195 210 20 4.0 - - 572 - 2.50  
TK109YGU GaP/GaP P 225 260 20 4.0 - - 572 - 2.50  
TK110YGU GaP/GaP P 250 260 20 4.0 - - 572 - 2.50  
TK111YGU GaP/GaP P 275 260 20 6.0 - - 572 - 2.40  
TK112YGU GaP/GaP P 300 260 20 6.0 - - 572 - 2.40  
TK113YGU GaP/GaP P 330 260 20 6.0 - - 572 - 2.40  
TK114YGU GaP/GaP P 355 260 20 6.0 - - 572 - 2.40  
TK811YGU GaP/GaP P 275 260 20 6.0 - - 572 - 2.40  
TK812YGU GaP/GaP P 300 260 20 6.0 - - 572 - 2.40  
TK110YGS GaP/GaP P 250 180 20 4.0 - - 572 - 2.50  
TK110YGH GaP/GaP P 255 260 20 13.0 - - 572 - - Wp=568 
TK210YG GaP/GaP N 250 260 20 3.0 - - 572 - 2.50  
TK211YG GaP/GaP N 275 260 20 3.0 - - 572 - 2.40  
TK508YG-L(G) AlGaInP/GaAs P 200 200 20 20 40 568 572 575 2.30 High Brightness
TK509YG-L(G) AlGaInP/GaAs P 225 200 20 20 50 568 572 575 2.30 H.B
TK511YG-G AlGaInP/GaAs P 275 200 20 35 60 568 572 575 2.30 H.B
TK508YGS-G AlGaInP/GaAs P 200 100 20 20 40 568 572 575 2.30 H.B
TK509YGS-G AlGaInP/GaAs P 225 100 20 25 45 568 572 575 2.30 H.B
TKB4009YG GaP/GaP 1000*230㎛ 255 20 ** - - 572 - 2.3 Wp=568
585nm
Yellow
TK108HY GaAsP/GaP P 195 210 20 2.5 - - 585 - 2.50  
TK109HY GaAsP/GaP P 225 260 20 3.0 - - 585 - 2.50  
TK110HY GaAsP/GaP P 250 260 20 3.0 - - 585 - 2.50  
Color (Wd) Part no Material Top Size 두께 IF IV(mcd) Wd(nm) Vf(V) 특징
전극 (um) (um) (mA) Min Max Min Typ Max Max
590nm
Amber
TK508UY-L(G) AlGaInP/GaAs P 200 200 20 30 70 585 590 592 2.30 H.B
TK509UY-L(G) AlGaInP/GaAs P 225 200 20 40 130 585 590 592 2.30 H.B
TK512UY-G AlGaInP/GaAs P 300 200 20 90 200 586 590 594 2.30 H.B
TK508UYS-G AlGaInP/GaAs P 200 100 20 30 70 585 590 592 2.30 H.B
TK509UYS-G AlGaInP/GaAs P 225 100 20 40 90 585 590 592 2.30 H.B
TK509UYU-G AlGaInP/GaAs P 225 250 20 300 450 588 590 591 2.40 H.B
TK510UYU-G AlGaInP/GaAs P 250 250 20 300 450 588 590 591 2.40 H.B
TK614UYA-G AlGaInP/GaP P/N 340 270 20 350 450 585 590 595 2.40 H.B
TK509UYH-G AlGaInP/Si N 225 170 20 180 300 585 590 595 2.40 H.B
TK512UYH-G AlGaInP/Si N 300 200 20 180 350 585 590 595 2.40 H.B
TK515UYH-G AlGaInP/Si N 355 200 20 180 350 585 590 595 2.40 H.B
TK530UYH-G AlGaInP/Si N 760 200 350 2150 5000 585 590 595 2.85 Power chip
TK540UYH-G AlGaInP/Si N 1000 200 350 4300 5700 585 590 595 2.70 Power chip
TK560UYH AlGaInP/Si N 60 200 700 Typ.10,000 585 590 595 2.20 High power
605nm
Soft
Orange
TK108SO GaAsP/GaP P 195 210 20 5.0 - - 607 - 2.50  
TK109SO GaAsP/GaP P 225 210 20 5.0 - - 607 - 2.50  
TK110SO GaAsP/GaP P 250 210 20 5.0 - - 607 - 2.50  
TK111SO GaAsP/GaP P 275 210 20 5.0 - - 607 - 2.40  
TK508SO-L(G) AlGaInP/GaAs P 200 200 20 70 110 600 605 610 2.30 High Brightness
TK509SO-L(G) AlGaInP/GaAs P 225 200 20 70 130 600 605 610 2.30 H.B
TK512SO-G AlGaInP/GaAs P 300 200 20 90 150 600 605 610 2.30 H.B
TK508SOS-G AlGaInP/GaAs P 200 100 20 70 110 600 605 610 2.30 H.B
TK509SOS-G AlGaInP/GaAs P 225 100 20 70 130 600 605 610 2.30 H.B
TK512SOH AlGaInP/Si N 300 200 20 260 400 600 605 610 2.40 H.B
618nm
Red
Orange
TK108HO GaAsP/GaP P 195 210 20 3.0 - - 620 - 2.50  
TK109HO GaAsP/GaP P 225 260 20 3.0 - - 620 - 2.50  
TK110HO GaAsP/GaP P 250 260 20 4.0 - - 620 - 2.50  
TK111HO GaAsP/GaP P 275 260 20 5.0 - - 620 - 2.40  
TK515SOH-G AlGaInP/Si N 355 200 20 260 350 613 620 623 2.40 H.B
TK520SOH-G AlGaInP/Si N 500 200 200 Power chip
TK530SOH-G AlGaInP/Si N 750 200 200 4300 6500 613 620 623 2.85 Power chip
TK540SOH-G AlGaInP/Si N 1000 200 200
TKB4009HO GaAsP 1000*230㎛ 255 20 5 - - 618 - - Wp=630
Color (Wd) Part no Material Top Size 두께 IF IV(mcd) Wd(nm) Vf(V) 특징
전극 (um) (um) (mA) Min Max Min Typ Max Max
620nm
Red
Orange
TK108RD GaP/GaP P 195 260 20 0.3 - - 620 - 2.50  
TK109RD GaP/GaP P 225 260 20 0.4 - - 620 - 2.50  
TK110RD GaP/GaP P 250 260 20 0.4 - - 620 - 2.50  
TK508UOL-L(G) AlGaInP/GaAs P 200 200 20 40 70 619 623 626 2.30 High Brightness
TK509UOL-L(G) AlGaInP/GaAs P 225 200 20 50 100 619 623 626 2.30 H.B
TK512UOL-G AlGaInP/GaAs P 300 200 20 90 130 619 623 626 2.30 H.B
TK508UOLS-G AlGaInP/GaAs P 200 100 20 40 70 619 623 626 2.30 H.B
TK509UOLS-G AlGaInP/GaAs P 225 100 20 50 100 619 623 626 2.30 H.B
TK509UOH-G AlGaInP/Si N 225 170 20 150 240 620 623 630 2.40 H.B
TK512UOH-G AlGaInP/Si N 300 200 20 220 260 620 623 630 2.40 H.B
TK515UOH-G AlGaInP/Si N 355 200 20 150 350 620 623 630 2.40 H.B
TK520UOH-G AlGaInP/Si N 500 200 150 620 623 630 2.75 Power chip
TK530UOH-G AlGaInP/Si N 760 200 350 2450 5000 620 623 630 2.85 Power chip
TK540UOH-G AlGaInP/Si N 1000 200 350 620 623 630 2.7 Power chip
TK560UOH AlGaInP/Si N 60 200 700 Typ.10,000 620 625 630 2.10 High power
628nm
Red
TK208HOD GaAsP/GaP P 195 210 20 5.0 - - 628 - 2.50  
TK209HOD GaAsP/GaP P 225 260 20 5.0 - - 628 - 2.50  
TK210HOD GaAsP/GaP P 250 260 20 5.0 - - 628 - 2.50  
TK508SR-L(G) AlGaInP/GaAs P 200 200 20 30 70 627 630 635 2.30 High Brightness
TK509SR-L(G) AlGaInP/GaAs P 225 200 20 40 80 627 630 635 2.30 H.B
TK512SR-G AlGaInP/GaAs P 300 200 20 60 90 627 630 635 2.30 H.B
TK508SRS-G AlGaInP/GaAs P 200 100 20 30 70 627 630 635 2.30 H.B
TK509SRS-G AlGaInP/GaAs P 225 100 20 40 80 627 630 635 2.30 H.B
Super
Red
TK507SRS AlGaAs/GaAs P 180 120 20 30↑ 50↑ - 631 - - Wp=645
TK508SRS AlGaAs/GaAs P 200 120 20 50↑ 70↑ - 631 - - Wp=645
TK509SRS AlGaAs/GaAs P 225 120 20 50↑ 70↑ - 631 - - Wp=645
640nm
Deep
Red
TK108SR AlGaAs/GaAs N 195 220 20 5 - 635 640 648 2.00  
TK109SR AlGaAs/GaAs N 225 250 20 6 - 635 640 648 2.00  
TK110SR AlGaAs/GaAs N 250 250 20 7 - 635 640 648 2.00  
TK109DR AlGaAs/GaAs N 255 280 20 20 - 640 2.00  
TK110DR AlGaAs/GaAs N 250 280 20 20 - 635 640 648 2.00  
TK111DR AlGaAs/GaAs N 275 280 20 20 - 635 640 648 2.00  
TK508DR-L(G) AlGaInP/GaAs P 200 200 20 20 50 635 638 644 2.30 H.B
TK509DR-L(G) AlGaInP/GaAs P 225 200 20 25 70 635 638 644 2.30 H.B
TK512DR-G AlGaInP/GaAs P 300 200 20 35 70 635 638 644 2.30 H.B
TK0512DRH AlGaInP/GaAs N 300 200 20 150↑ 220↑ - 640 - - Wp=655

 
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